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| 12-30 vol. 1 sales offices: visit our web site at http://www.temex.com silicon schottky diodes silicon schottky barrier mixer diodes dh301 f51 1 - 6 6.5 1.5 2 200 400 5 3 0.40 dh302 f51 1 - 6 6.0 1.5 2 200 400 5 3 0.40 dh303 f51 1 - 6 5.5 1.5 2 200 400 5 3 0.40 dh312 f51 6 - 12 7.0 1.5 2 200 400 5 3 0.25 dh313 f51 6 - 12 6.5 1.5 2 200 400 5 3 0.25 dh314 f51 6 - 12 6.0 1.5 2 200 400 5 3 0.25 dh315 f51 6 - 12 5.5 1.5 2 200 400 5 3 0.25 dh322 f51 12 - 18 7.5 1.5 2 200 400 5 3 0.17 dh323 f51 12 - 18 7.0 1.5 2 200 400 5 3 0.17 dh324 f51 12 - 18 6.5 1.5 2 200 400 5 3 0.17 DH325 f51 12 - 18 6.0 1.5 2 200 400 5 3 0.17 silicon schottky barrier mixer diodes are available in the following con?urations: packaged chip low barrier diodes are required for applications where the local oscillator (lo) drive level is between - 10 dbm and + 10 dbm. medium barrier diodes are required for applications where the lo drive level is between - 5 dbm and + 15 dbm. the use of a passivated planar construction contributes to high reliability. silicon schottky barrier mixer diodes electrical characteristics packaged diodes description rf power max: 250 mw cw temperature ranges: operating junction (t j ) : -55 c to +150 c (1) noise ?ure measurement conditions: storage : -65 c to +175 c p lo = 1 mw f if = 30 mhz nf if = 1.5 db noise tube: 15.6 db dc load = 10 ? test frequencies: 3.0, 9.3 or 15.0 ghz (2) custom cases available on request type case (2) ghz db ratio ? ergs v pf i r = 10 ? f=1mh z v r =0v pulse = 3 n s f = 30 mh z p lo = 1 mw n/a characteristics at 25? vswr (ratio) if impedance z if test pulse energy breakdown voltage v br total capacitance c to frequency range f oper ssb noise ?ure nf ssb test conditions n/a (1) max typ. max min. max max typ. typ.
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